КП342
КП342, КП342А
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Description
Parameters
| Parameter | КП342А | |
|---|---|---|
Noise factor | NF | |
Power dissipation | P | <200 mW |
Slope of a field effect transistor | S1-S2/I | >18при Iс = 20 мА |
Gate leakage current with connected drain and source | IG | |
Input capacitance of field effect transistor | Ciss | 7 pF |
Feedthrough capacitance | C12 | 0.6 pF |
Continuous voltage between gate and drain | UGD | <70 V |
Continuous voltage between gate and source | UGS | <30 V |
Continuous voltage between drain and source | UDSS | <60 V |
FET channel type | Channel | N-ch |