2П341А
2П341, 2П341А, 2П341Б
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Description
Parameters
| Parameter | 2П341А | 2П341Б | |
|---|---|---|---|
Noise factor | NF | 3 dBпри f = 0.4 ГГц | |
Power dissipation | P | <150 mW | |
Slope of a field effect transistor | S1-S2/I | 15 ~ 30при Uси = 5 В | 18 ~ 32при Uси = 5 В |
Initial drain current of the field effect transistor | I01-I02 | 4.5 A ~ 20 Aпри U = 5 В | 16 A ~ 30 Aпри U = 5 В |
Gate leakage current with connected drain and source | IG | 1 nAпри Uсз = 10В | |
Input capacitance of field effect transistor | Ciss | 4.2 pF | |
Feedthrough capacitance | C12 | 1 pF | |
Continuous voltage between gate and drain | UGD | <15 V | |
Continuous voltage between gate and source | UGS | <10 V | |
Continuous voltage between drain and source | UDSS | <15 V | |
Technology of field-effect transistor | Technology | JFET | |
FET channel type | Channel | N-ch | |