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2П340

2П340, 2П340А-1, 2П340Б-1

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Description

Parameters

Parameter2П340А-12П340Б-1
Noise factor
NF
Power dissipation
P
<60 mW
Slope of a field effect transistor
S1-S2/I
>4при Iс = 10 мА
Gate leakage current with connected drain and source
IG
1 nAпри Uсз = 10В
Input capacitance of field effect transistor
Ciss
6 pF
Continuous voltage between gate and drain
UGD
<30 V
Continuous voltage between gate and source
UGS
<30 V
Continuous voltage between drain and source
UDSS
<25 V
FET channel type
Channel
N-ch