This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Parameter | 2П340А-1 | 2П340Б-1 | |
---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <60 mW | |
Slope of a field effect transistor | S1-S2/I | >4при Iс = 10 мА | |
Gate leakage current with connected drain and source | IG | 1 nAпри Uсз = 10В | |
Input capacitance of field effect transistor | Ciss | 6 pF | |
Continuous voltage between gate and drain | UGD | <30 V | |
Continuous voltage between gate and source | UGS | <30 V | |
Continuous voltage between drain and source | UDSS | <25 V | |
FET channel type | Channel | N-ch |