2П339
2П339, 3П339А-2
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Description
Parameters
| Parameter | 3П339А-2 | |
|---|---|---|
Noise factor | NF | 2.4 dBпри f = 8 ГГц |
Power dissipation | P | <250 mW |
Slope of a field effect transistor | S1-S2/I | >10при Iс = 10 мА |
Initial drain current of the field effect transistor | I01-I02 | 50 A ~ 90 Aпри U = 2 В |
Gate leakage current with connected drain and source | IG | 1 µA |
Continuous voltage between gate and drain | UGD | <7 V |
Continuous voltage between gate and source | UGS | <5 V |
Continuous voltage between drain and source | UDSS | <5.5 V |
Technology of field-effect transistor | Technology | Schottky |
FET channel type | Channel | N-ch |