2П338
2П338, 2П338АР1
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Description
Parameters
| Parameter | 2П338АР1 | |
|---|---|---|
Noise factor | NF | |
Power dissipation | P | <60 mW |
Slope of a field effect transistor | S1-S2/I | 10 ~ 13при Iс = 5 мА |
Gate leakage current with connected drain and source | IG | 300 pAпри Uсз = 15В |
Input capacitance of field effect transistor | Ciss | 5 pF |
Feedthrough capacitance | C12 | 2 pF |
Continuous voltage between gate and drain | UGD | <25 V |
Continuous voltage between gate and source | UGS | <25 V |
Continuous voltage between drain and source | UDSS | <20 V |
Continuous drain current | IDSS | <10 mA |
Technology of field-effect transistor | Technology | JFET |
FET channel type | Channel | N-ch |