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2П337АР

2П337, 2П337АР, 2П337БР

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Description

Parameters

Parameter2П337АР2П337БР
Noise factor
NF
Power dissipation
P
<200 mW
Slope of a field effect transistor
S1-S2/I
10 ~ 14при Iс = 10 мА
Initial drain current of the field effect transistor
I01-I02
20 A ~ 87 Aпри U = 5 В
Gate leakage current with connected drain and source
IG
1 nAпри Uсз = 10В
Input capacitance of field effect transistor
Ciss
5.5 pF
Feedthrough capacitance
C12
2.5 pF
Continuous voltage between gate and drain
UGD
<30 V
Continuous voltage between gate and source
UGS
<25 V
Continuous voltage between drain and source
UDSS
<25 V
Technology of field-effect transistor
Technology
JFET
FET channel type
Channel
N-ch