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2П336Б-1

2П336, 2П336А-1, 2П336Б-1

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Description

Parameters

Parameter2П336А-12П336Б-1
Noise factor
NF
Power dissipation
P
<60 mW
Slope of a field effect transistor
S1-S2/I
4 ~ 23при Iс = 10 мА
Gate leakage current with connected drain and source
IG
1 nAпри Uсз = 10В
Continuous voltage between gate and drain
UGD
<30 V
Continuous voltage between gate and source
UGS
<30 V
Continuous voltage between drain and source
UDSS
<25 V
Technology of field-effect transistor
Technology
JFET
FET channel type
Channel
N-ch