2П336
2П336, 2П336А-1, 2П336Б-1
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Description
Parameters
| Parameter | 2П336А-1 | 2П336Б-1 | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <60 mW | |
Slope of a field effect transistor | S1-S2/I | 4 ~ 23при Iс = 10 мА | |
Gate leakage current with connected drain and source | IG | 1 nAпри Uсз = 10В | |
Continuous voltage between gate and drain | UGD | <30 V | |
Continuous voltage between gate and source | UGS | <30 V | |
Continuous voltage between drain and source | UDSS | <25 V | |
Technology of field-effect transistor | Technology | JFET | |
FET channel type | Channel | N-ch | |