2П335Б-2
2П335, 2П335А-2, 2П335Б-2
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Description
Parameters
| Parameter | 2П335А-2 | 2П335Б-2 | |
|---|---|---|---|
Noise factor | NF | 4 dBпри f = 0.4 ГГц | 6 dBпри f = 0.4 ГГц |
Power dissipation | P | <100 mW | |
Slope of a field effect transistor | S1-S2/I | 4 ~ 5.8при Iс = 15 мА | 2 ~ 5.8 |
Initial drain current of the field effect transistor | I01-I02 | 8 A ~ 25 Aпри U = 15 В | 1.5 A ~ 25 Aпри U = 15 В |
Gate leakage current with connected drain and source | IG | 10 nAпри Uсз = 10В | |
Feedthrough capacitance | C12 | 1 pF | |
Continuous voltage between gate and drain | UGD | <25 V | |
Continuous voltage between gate and source | UGS | <25 V | |
Continuous voltage between drain and source | UDSS | <20 V | |
Continuous drain current | IDSS | <25 mA | |
Technology of field-effect transistor | Technology | JFET | |
FET channel type | Channel | N-ch | |