2П334Б
2П334, 2П334А, 2П334Б
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Description
Parameters
| Parameter | 2П334А | 2П334Б | |
|---|---|---|---|
Noise factor | NF | 5.5 dBпри f = 0.2 ГГц | |
Power dissipation | P | <200 mW | |
Slope of a field effect transistor | S1-S2/I | >4при Uси = 10 В | >6при Uси = 10 В |
Gate leakage current with connected drain and source | IG | 1 nAпри Uсз = 10В | |
Input capacitance of field effect transistor | Ciss | 6 pF | |
Continuous voltage between gate and drain | UGD | <30 V | |
Continuous voltage between gate and source | UGS | <30 V | |
Continuous voltage between drain and source | UDSS | <25 V | |
FET channel type | Channel | N-ch | |