2П333Б

2П333, 2П333А, 2П333Б, 2П333В, 2П333Г

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Description

Parameters

Parameter		2П333А	2П333Б	2П333В	2П333Г
Noise factor	N_F
Power dissipation	P	<250 mW
Slope of a field effect transistor	S1-S2/I	4 ~ 5.8при Uси = 10 В	2 ~ 5при Uси = 10 В	4 ~ 5.8при Uси = 10 В	2 ~ 5при Uси = 10 В
Gate leakage current with connected drain and source	I_G	200 pAпри Uсз = 10В	100 nAпри Uсз = 35В	200 pAпри Uсз = 10В
Input capacitance of field effect transistor	C_iss	6 pF
Continuous voltage between gate and drain	U_GD	<50 V	<40 V	<50 V	<40 V
Continuous voltage between gate and source	U_GS	<45 V	<35 V	<45 V	<35 V
Continuous voltage between drain and source	U_DSS	<50 V	<40 V	<50 V	(not set)
Technology of field-effect transistor	Technology	JFET
FET channel type	Channel	N-ch