2П333А

2П333, 2П333А, 2П333Б, 2П333В, 2П333Г

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

Parameter		2П333А	2П333Б	2П333В	2П333Г
Noise factor	N_F
Power dissipation	P	<250 mW
Slope of a field effect transistor	S1-S2/I	4 ~ 5.8при Uси = 10 В	2 ~ 5при Uси = 10 В	4 ~ 5.8при Uси = 10 В	2 ~ 5при Uси = 10 В
Gate leakage current with connected drain and source	I_G	200 pAпри Uсз = 10В	100 nAпри Uсз = 35В	200 pAпри Uсз = 10В
Input capacitance of field effect transistor	C_iss	6 pF
Continuous voltage between gate and drain	U_GD	<50 V	<40 V	<50 V	<40 V
Continuous voltage between gate and source	U_GS	<45 V	<35 V	<45 V	<35 V
Continuous voltage between drain and source	U_DSS	<50 V	<40 V	<50 V	(not set)
Technology of field-effect transistor	Technology	JFET
FET channel type	Channel	N-ch