2П332
2П332, 2П332А
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Description
Parameters
| Parameter | 2П332А | |
|---|---|---|
Noise factor | NF | |
Power dissipation | P | <100 mW |
Slope of a field effect transistor | S1-S2/I | 4 ~ 6.5при Iс = 10 мА |
Gate leakage current with connected drain and source | IG | 50 nAпри Uсз = 15В |
Input capacitance of field effect transistor | Ciss | 15 pF |
Feedthrough capacitance | C12 | 3 pF |
Continuous voltage between gate and drain | UGD | <15 V |
Continuous voltage between gate and source | UGS | <15 V |
Continuous voltage between drain and source | UDSS | <15 V |
Continuous drain current | IDSS | <30 mA |
FET channel type | Channel | P-ch |