3П331А-2
3П331, 3П331А-2
This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Description
Parameters
| Parameter | 3П331А-2 | |
|---|---|---|
Noise factor | NF | 4.5 dBпри f = 10 ГГц |
Power dissipation | P | <200 mW |
Slope of a field effect transistor | S1-S2/I | >15при Iс = 40 мА |
Initial drain current of the field effect transistor | I01-I02 | 100 A ~ 150 Aпри U = 3 В |
Gate leakage current with connected drain and source | IG | 1 µAпри Uсз = 2.5В |
Continuous voltage between gate and drain | UGD | <8 V |
Continuous voltage between gate and source | UGS | <4 V |
Continuous voltage between drain and source | UDSS | <5 V |
Technology of field-effect transistor | Technology | Schottky |
FET channel type | Channel | N-ch |