3П331

3П331, 3П331А-2

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Description

Parameters

Parameter		3П331А-2
Noise factor	N_F	4.5 dBпри f = 10 ГГц
Power dissipation	P	<200 mW
Slope of a field effect transistor	S1-S2/I	>15при Iс = 40 мА
Initial drain current of the field effect transistor	I₀₁-I₀₂	100 A ~ 150 Aпри U = 3 В
Gate leakage current with connected drain and source	I_G	1 µAпри Uсз = 2.5В
Continuous voltage between gate and drain	U_GD	<8 V
Continuous voltage between gate and source	U_GS	<4 V
Continuous voltage between drain and source	U_DSS	<5 V
Technology of field-effect transistor	Technology	Schottky
FET channel type	Channel	N-ch