3П330Б-2
3П330, 3П330А-2, 3П330Б-2, 3П330В-2
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Description
Parameters
| Parameter | 3П330А-2 | 3П330Б-2 | 3П330В-2 | |
|---|---|---|---|---|
Noise factor | NF | 6 dBпри f = 25 ГГц | 4.5 dBпри f = 25 ГГц | 3.5 dBпри f = 17 ГГц |
Power dissipation | P | <30 mW | ||
Slope of a field effect transistor | S1-S2/I | >5при Iс = 10 мА | ||
Initial drain current of the field effect transistor | I01-I02 | <50 Aпри U = 2 В | ||
Gate leakage current with connected drain and source | IG | 1 µA | ||
Continuous voltage between gate and drain | UGD | <6 V | ||
Continuous voltage between gate and source | UGS | <4 V | ||
Continuous voltage between drain and source | UDSS | <3 V | ||
Technology of field-effect transistor | Technology | Schottky | ||
FET channel type | Channel | N-ch | ||