КП329Б
КП329, КП329А, КП329Б
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Description
Parameters
| Parameter | КП329А | КП329Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <250 mW | |
Slope of a field effect transistor | S1-S2/I | >3при Uси = 10 В | >1при Uси = 10 В |
Gate leakage current with connected drain and source | IG | 1 nAпри Uсз = 10В | 100 pAпри Uсз = 30В |
Input capacitance of field effect transistor | Ciss | 6 pF | |
Continuous voltage between gate and drain | UGD | <50 V | <40 V |
Continuous voltage between gate and source | UGS | <45 V | <35 V |
Continuous voltage between drain and source | UDSS | <50 V | <40 V |
Technology of field-effect transistor | Technology | JFET | |
FET channel type | Channel | N-ch | |