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КП327Б

КП327, КП327А, КП327Б, КП327В, КП327Г

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Description

Parameters

Parameter		КП327А	КП327Б	КП327В	КП327Г
Noise factor	N_F	3.9 dBпри f = 0.8 ГГц	2.8 dBпри f = 0.2 ГГц	4.5 dBпри f = 0.8 ГГц	3 dBпри f = 0.2 ГГц
Power dissipation	P	<200 mW
Slope of a field effect transistor	S1-S2/I	>9.5при Iс = 10 мА
Initial drain current of the field effect transistor	I₀₁-I₀₂	500 mA ~ 17 Aпри U = 10 В	500 mA ~ 17 Aпри U = 10 В	<17 Aпри U = 10 В	<17 Aпри U = 10 В
Gate leakage current with connected drain and source	I_G	50 nAпри Uсз = 5В
Input capacitance of field effect transistor	C_iss	2.3 pF	3 pF	2.5 pF	3.6 pF
Feedthrough capacitance	C₁₂	0.04 pF
Continuous voltage between gate and drain	U_GD	<16 V
Continuous voltage between gate and source	U_GS	<5 V
Continuous voltage between drain and source	U_DSS	<14 V
Continuous drain current	I_DSS	<30 mA
Technology of field-effect transistor	Technology	MOSFET
FET channel type	Channel	N-ch