3П326Б-2
3П326, 3П326А-2, 3П326Б-2
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Description
Parameters
| Parameter | 3П326А-2 | 3П326Б-2 | |
|---|---|---|---|
Noise factor | NF | 4.5 dBпри f = 17 ГГц | 5.5 dBпри f = 17 ГГц |
Power dissipation | P | <30 mW | |
Slope of a field effect transistor | S1-S2/I | 8 ~ 16при Iс = 8 мА | |
Initial drain current of the field effect transistor | I01-I02 | 25 A ~ 70 Aпри U = 2.5 В | |
Gate leakage current with connected drain and source | IG | 5 µA | |
Continuous voltage between gate and drain | UGD | <5.5 V | |
Continuous voltage between gate and source | UGS | <4 V | |
Continuous voltage between drain and source | UDSS | <2.5 V | |
Technology of field-effect transistor | Technology | Schottky | |
FET channel type | Channel | N-ch | |