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3П324Б-2

3П324, 3П324А-2, 3П324Б-2

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Description

Parameters

Parameter3П324А-23П324Б-2
Noise factor
NF
3.5 dBпри f = 12 ГГц5 dBпри f = 12 ГГц
Power dissipation
P
<60 mW
Slope of a field effect transistor
S1-S2/I
5 ~ 10при Iс = 10 мА
Gate leakage current with connected drain and source
IG
20 µA
Continuous voltage between gate and drain
UGD
<9 V
Continuous voltage between gate and source
UGS
<5 V
Continuous voltage between drain and source
UDSS
<4 V
Technology of field-effect transistor
Technology
Schottky
FET channel type
Channel
N-ch