КП323А-2
КП323, КП323А-2, КП323Б-2
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Description
Parameters
| Parameter | КП323А-2 | КП323Б-2 | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <100 mW | |
Slope of a field effect transistor | S1-S2/I | 4 ~ 5.8при Uси = 10 В | |
Initial drain current of the field effect transistor | I01-I02 | 3 A ~ 12 Aпри U = 10 В | |
Gate leakage current with connected drain and source | IG | 100 pAпри Uсз = 10В | 1 nAпри Uсз = 10В |
Input capacitance of field effect transistor | Ciss | 4 pF | |
Feedthrough capacitance | C12 | 1.2 pF | |
Continuous voltage between gate and drain | UGD | <25 V | |
Continuous voltage between gate and source | UGS | <25 V | |
Continuous voltage between drain and source | UDSS | <20 V | |
Continuous drain current | IDSS | <12 mA | <5 mA |
Technology of field-effect transistor | Technology | JFET | |
FET channel type | Channel | N-ch | |