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3П320

3П320, 3П320А-2, 3П320Б-2

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Description

Parameters

Parameter3П320А-23П320Б-2
Noise factor
NF
4.5 dBпри f = 8 ГГц6 dBпри f = 8 ГГц
Power dissipation
P
<80 mW
Slope of a field effect transistor
S1-S2/I
5 ~ 16при Iс = 10 мА
Gate leakage current with connected drain and source
IG
20 µA
Input capacitance of field effect transistor
Ciss
0.18 pF
Feedthrough capacitance
C12
0.15 pF
Continuous voltage between gate and drain
UGD
<8 V
Continuous voltage between gate and source
UGS
<5 V
Continuous voltage between drain and source
UDSS
<4 V
Technology of field-effect transistor
Technology
Schottky
FET channel type
Channel
N-ch