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2ПС316Б1

2ПС316, 2ПС316А1, 2ПС316Б1, 2ПС316В1, 2ПС316Г1, 2ПС316Д1, 2ПС316Е1, 2ПС316Ж1, 2ПС316И1

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Description

Parameters

Parameter2ПС316А12ПС316Б12ПС316В12ПС316Г12ПС316Д12ПС316Е12ПС316Ж12ПС316И1
Noise factor
NF
Power dissipation
P
<60 mW
Slope of a field effect transistor
S1-S2/I
>0.5при Iс = 0.3 мА
Gate leakage current with connected drain and source
IG
100 pAпри Uсз = 5В1 nAпри Uсз = 5В1 nAпри Uсз = 5В1 nAпри Uсз = 5В500 pAпри Uсз = 5В1 nAпри Uсз = 5В1 nAпри Uсз = 5В1 nAпри Uсз = 5В
Input capacitance of field effect transistor
Ciss
6 pF
Feedthrough capacitance
C12
2 pF
Continuous voltage between gate and drain
UGD
<25 V
Continuous voltage between gate and source
UGS
<25 V
Continuous voltage between drain and source
UDSS
<25 V
Technology of field-effect transistor
Technology
JFET
FET channel type
Channel
N-ch