КПС315Б
КПС315, КПС315А, КПС315Б
This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Description
Parameters
| Parameter | КПС315А | КПС315Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <300 mW | |
Slope of a field effect transistor | S1-S2/I | >2.8при Iс = 5 мА | 1 ~ 5при Iс = 5 мА |
Initial drain current of the field effect transistor | I01-I02 | 1 A ~ 20 A | |
Gate leakage current with connected drain and source | IG | 250 pAпри Uсз = 5В | 1 nAпри Uсз = 5В |
Input capacitance of field effect transistor | Ciss | 8 pF | |
Continuous voltage between gate and drain | UGD | <30 V | |
Continuous voltage between gate and source | UGS | <30 V | |
Continuous voltage between drain and source | UDSS | <25 V | |
Technology of field-effect transistor | Technology | JFET | |
FET channel type | Channel | N-ch | |