КПС315А
КПС315, КПС315А, КПС315Б
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Description
Parameters
| Parameter | КПС315А | КПС315Б | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <300 mW | |
Slope of a field effect transistor | S1-S2/I | >2.8при Iс = 5 мА | 1 ~ 5при Iс = 5 мА |
Initial drain current of the field effect transistor | I01-I02 | 1 A ~ 20 A | |
Gate leakage current with connected drain and source | IG | 250 pAпри Uсз = 5В | 1 nAпри Uсз = 5В |
Input capacitance of field effect transistor | Ciss | 8 pF | |
Continuous voltage between gate and drain | UGD | <30 V | |
Continuous voltage between gate and source | UGS | <30 V | |
Continuous voltage between drain and source | UDSS | <25 V | |
Technology of field-effect transistor | Technology | JFET | |
FET channel type | Channel | N-ch | |