КП314
КП314, КП314А
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Description
Parameters
| Parameter | КП314А | |
|---|---|---|
Noise factor | NF | |
Power dissipation | P | <200 mW |
Slope of a field effect transistor | S1-S2/I | >4при Uси = 10 В |
Initial drain current of the field effect transistor | I01-I02 | 2.5 A ~ 20 Aпри U = 10 В |
Gate leakage current with connected drain and source | IG | 100 pAпри Uсз = 10В |
Input capacitance of field effect transistor | Ciss | 6 pF |
Feedthrough capacitance | C12 | 2 pF |
Continuous voltage between gate and drain | UGD | <30 V |
Continuous voltage between gate and source | UGS | <30 V |
Continuous voltage between drain and source | UDSS | <25 V |
Continuous drain current | IDSS | <20 mA |
Technology of field-effect transistor | Technology | JFET |
FET channel type | Channel | N-ch |