КП313Б
КП313, КП313А, КП313Б, КП313В
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Description
Parameters
| Parameter | КП313А | КП313Б | КП313В | |
|---|---|---|---|---|
Noise factor | NF | 6.5 dBпри f = .25 ГГц | ||
Power dissipation | P | <120 mW | ||
Slope of a field effect transistor | S1-S2/I | 4.5 ~ 10.5при Iс = 5 мА | ||
Gate leakage current with connected drain and source | IG | 10 nAпри Uсз = 10В | ||
Input capacitance of field effect transistor | Ciss | 7 pF | ||
Feedthrough capacitance | C12 | 0.9 pF | ||
Continuous voltage between gate and drain | UGD | <15 V | ||
Continuous voltage between gate and source | UGS | <10 V | ||
Continuous voltage between drain and source | UDSS | <15 V | ||
Continuous drain current | IDSS | <15 mA | ||
Technology of field-effect transistor | Technology | MOSFET | ||
FET channel type | Channel | N-ch | ||