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2П310Б

2П310, 2П310А, 2П310Б

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Description

Parameters

Parameter2П310А2П310Б
Noise factor
NF
6 dBпри f = 1 ГГц7 dBпри f = 1 ГГц
Power dissipation
P
<80 mW
Slope of a field effect transistor
S1-S2/I
3 ~ 6при Iс = 5 мА
Gate leakage current with connected drain and source
IG
3 nAпри Uсз = 10В
Input capacitance of field effect transistor
Ciss
2.5 pF
Feedthrough capacitance
C12
0.5 pF
Continuous voltage between gate and drain
UGD
<10 V
Continuous voltage between gate and source
UGS
<10 V
Continuous voltage between drain and source
UDSS
<8 V
Continuous drain current
IDSS
<20 mA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch