2П308Б-9
2П308, 2П308А-9, 2П308Б-9, 2П308В-9, 2П308Г-9, 2П308Д-9, 2П308Е-9
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Description
Parameters
| Parameter | 2П308А-9 | 2П308Б-9 | 2П308В-9 | 2П308Г-9 | 2П308Д-9 | 2П308Е-9 | |
|---|---|---|---|---|---|---|---|
Noise factor | NF | ||||||
Power dissipation | P | <80 mW | |||||
Slope of a field effect transistor | S1-S2/I | 1 ~ 4при Uси = 10 В | 1 ~ 4при Uси = 10 В | 1.4 ~ 3при Uси = 10 В | (not set) | (not set) | >1при Uси = 10 В |
Initial drain current of the field effect transistor | I01-I02 | 400 mA ~ 1 Aпри U = 10 В | 800 mA ~ 1.6 Aпри U = 10 В | 2 A ~ 5 Aпри U = 10 В | (not set) | (not set) | 2.8 A ~ 6 Aпри U = 10 В |
Gate leakage current with connected drain and source | IG | 1 nAпри Uсз = 10В | |||||
Input capacitance of field effect transistor | Ciss | 6 pF | |||||
Feedthrough capacitance | C12 | 2 pF | |||||
Continuous voltage between gate and drain | UGD | <30 V | |||||
Continuous voltage between gate and source | UGS | <30 V | |||||
Continuous voltage between drain and source | UDSS | <25 V | |||||
Continuous drain current | IDSS | <20 mA | |||||
Technology of field-effect transistor | Technology | JFET | |||||
FET channel type | Channel | N-ch | |||||