КП306Б
КП306, КП306А, КП306Б, КП306В
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Description
Parameters
| Parameter | КП306А | КП306Б | КП306В | |
|---|---|---|---|---|
Noise factor | NF | 6 dBпри f = 0.2 ГГц | ||
Power dissipation | P | <150 mW | ||
Slope of a field effect transistor | S1-S2/I | 3 ~ 8при Iс = 5 мА | ||
Gate leakage current with connected drain and source | IG | 5 nAпри Uсз = 20В | ||
Input capacitance of field effect transistor | Ciss | 5 pF | ||
Feedthrough capacitance | C12 | 0.07 pF | ||
Continuous voltage between gate and drain | UGD | <20 V | ||
Continuous voltage between gate and source | UGS | <20 V | ||
Continuous voltage between drain and source | UDSS | <20 V | ||
Continuous drain current | IDSS | <20 mA | ||
Technology of field-effect transistor | Technology | MOSFET | ||
FET channel type | Channel | N-ch | ||