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КП305

КП305, 2П305А, 2П305Б, 2П305В, 2П305Г, КП305Д, КП305Е, КП305Ж, КП305И

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Description

Parameters

Parameter2П305А2П305Б2П305В2П305ГКП305ДКП305ЕКП305ЖКП305И
Noise factor
NF
6 dBпри f = 0.25 ГГц6 dBпри f = 0.25 ГГц6 dBпри f = 0.25 ГГц7 dBпри f = 0.25 ГГц7 dBпри f = 0.25 ГГц7 dBпри f = 0.25 ГГц7 dBпри f = 0.25 ГГц
Power dissipation
P
<150 mW
Slope of a field effect transistor
S1-S2/I
6 ~ 10при Iс = 5 мА 4 ~ 8при Iс = 5 мА 6 ~ 10при Iс = 5 мА 6 ~ 10при Iс = 5 мА 5.2 ~ 10.5при Iс = 5 мА 4 ~ 8при Iс = 5 мА 5.2 ~ 10.5при Iс = 5 мА 4 ~ 10.5при Iс = 5 мА
Gate leakage current with connected drain and source
IG
1 nAпри Uсз = 30В1 pAпри Uсз = 30В1 nAпри Uсз = 30В1 nAпри Uсз = 30В1 nAпри Uсз = 15В1 pAпри Uсз = 15В1 nAпри Uсз = 15В1 nAпри Uсз = 15В
Input capacitance of field effect transistor
Ciss
5 pF
Feedthrough capacitance
C12
0.8 pF
Continuous voltage between gate and drain
UGD
<30 V<30 V<30 V<30 V<15 V<15 V<15 V<15 V
Continuous voltage between gate and source
UGS
<30 V<30 V<30 V<30 V<15 V<15 V<15 V<15 V
Continuous voltage between drain and source
UDSS
<15 V
Continuous drain current
IDSS
<15 mA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
N-ch