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КП302АМ

КП302, КП302А, КП302Б, КП302В, КП302Г, КП302АМ, КП302БМ, КП302ВМ, КП302ГМ

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Description

Parameters

Parameter		КП302А	КП302Б	КП302В	КП302Г	КП302АМ	КП302БМ	КП302ВМ	КП302ГМ
Noise factor	N_F	3 dBпри f = 1КГц				3 dBпри f = 1КГц
Power dissipation	P	<300 mW
Slope of a field effect transistor	S1-S2/I	5 ~ 15при Iс = 7 мА	7 ~ 17при Iс = 7 мА	(not set)	>5при Iс = 7 мА	5 ~ 15при Iс = 7 мА	7 ~ 17при Iс = 7 мА	(not set)	>5при Iс = 7 мА
Initial drain current of the field effect transistor	I₀₁-I₀₂	3 A ~ 24 Aпри U = 7 В	18 A ~ 43 Aпри U = 7 В	33 A ~ 80 Aпри U = 10 В	>15 Aпри U = 7 В	>3 Aпри U = 7 В	18 A ~ 43 Aпри U = 7 В	33 A ~ 80 Aпри U = 10 В	>15 Aпри U = 7 В
Gate leakage current with connected drain and source	I_G	10 nAпри Uсз = 10В
Input capacitance of field effect transistor	C_iss	20 pF
Feedthrough capacitance	C₁₂	8 pF
Continuous voltage between gate and drain	U_GD	<20 V	<20 V	<20 V	<10 V	<20 V	<20 V	<20 V	<10 V
Continuous voltage between gate and source	U_GS	<10 V
Continuous voltage between drain and source	U_DSS	<20 V
Continuous drain current	I_DSS	<24 mA	<43 mA	(not set)	(not set)	<24 mA	<43 mA	(not set)	(not set)
Technology of field-effect transistor	Technology	JFET
FET channel type	Channel	N-ch