КП301Б
КП301, КП301А, КП301Б, КП301В, КП301Г
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Description
Parameters
| Parameter | КП301А | КП301Б | КП301В | КП301Г | |
|---|---|---|---|---|---|
Noise factor | NF | 5 dBпри f = 0.1 ГГц | 9.5 dBпри f = 0.1 ГГц | 9.5 dBпри f = 0.1 ГГц | 9.5 dBпри f = 0.1 ГГц |
Power dissipation | P | <200 mW | |||
Slope of a field effect transistor | S1-S2/I | >1при Iс = 5 мА | >1при Iс = 5 мА | >2при Iс = 5 мА | >0.5при Iс = 5 мА |
Gate leakage current with connected drain and source | IG | 300 pAпри Uсз = 30В | |||
Input capacitance of field effect transistor | Ciss | 3.5 pF | |||
Feedthrough capacitance | C12 | 0.7 pF | 1 pF | 1 pF | 1 pF |
Continuous voltage between gate and source | UGS | <30 V | |||
Continuous voltage between drain and source | UDSS | <20 V | |||
Continuous drain current | IDSS | <15 mA | |||
Technology of field-effect transistor | Technology | MOSFET | |||
FET channel type | Channel | P-ch | |||