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КП301

КП301, КП301А, КП301Б, КП301В, КП301Г

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Description

Parameters

ParameterКП301АКП301БКП301ВКП301Г
Noise factor
NF
5 dBпри f = 0.1 ГГц9.5 dBпри f = 0.1 ГГц9.5 dBпри f = 0.1 ГГц9.5 dBпри f = 0.1 ГГц
Power dissipation
P
<200 mW
Slope of a field effect transistor
S1-S2/I
>1при Iс = 5 мА >1при Iс = 5 мА >2при Iс = 5 мА >0.5при Iс = 5 мА
Gate leakage current with connected drain and source
IG
300 pAпри Uсз = 30В
Input capacitance of field effect transistor
Ciss
3.5 pF
Feedthrough capacitance
C12
0.7 pF1 pF1 pF1 pF
Continuous voltage between gate and source
UGS
<30 V
Continuous voltage between drain and source
UDSS
<20 V
Continuous drain current
IDSS
<15 mA
Technology of field-effect transistor
Technology
MOSFET
FET channel type
Channel
P-ch