КПС203А1
КПС203, КПС203А1, КПС203Б1, КПС203В1, КПС203Г1
This page is planned to add content in the near future.
Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address
Description
Parameters
| Parameter | КПС203А1 | КПС203Б1 | КПС203В1 | КПС203Г1 | |
|---|---|---|---|---|---|
Noise factor | NF | ||||
Power dissipation | P | <30 mW | |||
Slope of a field effect transistor | S1-S2/I | >0.5при Uси = 10 В | >0.5при Uси = 10 В | >0.65при Uси = 10 В | >1при Uси = 10 В |
Initial drain current of the field effect transistor | I01-I02 | 250 mA ~ 1.5 Aпри U = 10 В | 250 mA ~ 1.5 Aпри U = 10 В | 350 mA ~ 1.5 Aпри U = 10 В | 1.1 A ~ 3 Aпри U = 10 В |
Gate leakage current with connected drain and source | IG | 600 pAпри Uсз = 10В | 600 pAпри Uсз = 10В | 1 nAпри Uсз = 10В | 1 nAпри Uсз = 10В |
Input capacitance of field effect transistor | Ciss | 6 pF | |||
Feedthrough capacitance | C12 | 2 pF | |||
Continuous voltage between gate and drain | UGD | <20 V | |||
Continuous voltage between gate and source | UGS | <500 mV | |||
Continuous voltage between drain and source | UDSS | <15 V | |||
Technology of field-effect transistor | Technology | JFET | |||
FET channel type | Channel | N-ch | |||