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КПС203

КПС203, КПС203А1, КПС203Б1, КПС203В1, КПС203Г1

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Description

Parameters

ParameterКПС203А1КПС203Б1КПС203В1КПС203Г1
Noise factor
NF
Power dissipation
P
<30 mW
Slope of a field effect transistor
S1-S2/I
>0.5при Uси = 10 В>0.5при Uси = 10 В>0.65при Uси = 10 В>1при Uси = 10 В
Initial drain current of the field effect transistor
I01-I02
250 mA ~ 1.5 Aпри U = 10 В250 mA ~ 1.5 Aпри U = 10 В350 mA ~ 1.5 Aпри U = 10 В1.1 A ~ 3 Aпри U = 10 В
Gate leakage current with connected drain and source
IG
600 pAпри Uсз = 10В600 pAпри Uсз = 10В1 nAпри Uсз = 10В1 nAпри Uсз = 10В
Input capacitance of field effect transistor
Ciss
6 pF
Feedthrough capacitance
C12
2 pF
Continuous voltage between gate and drain
UGD
<20 V
Continuous voltage between gate and source
UGS
<500 mV
Continuous voltage between drain and source
UDSS
<15 V
Technology of field-effect transistor
Technology
JFET
FET channel type
Channel
N-ch