2П202Д-1
2П202, 2П202Д-1, 2П202Е-1
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Description
Parameters
| Parameter | 2П202Д-1 | 2П202Е-1 | |
|---|---|---|---|
Noise factor | NF | ||
Power dissipation | P | <60 mW | |
Slope of a field effect transistor | S1-S2/I | >0.65при Uси = 10 В | >1при Uси = 10 В |
Initial drain current of the field effect transistor | I01-I02 | 350 mA ~ 1.5 Aпри U = 10 В | 1.1 A ~ 3 Aпри U = 10 В |
Gate leakage current with connected drain and source | IG | 300 pAпри Uсз = 10В | |
Input capacitance of field effect transistor | Ciss | 6 pF | |
Feedthrough capacitance | C12 | 2 pF | |
Continuous voltage between gate and drain | UGD | <20 V | |
Continuous voltage between gate and source | UGS | <500 mV | |
Continuous voltage between drain and source | UDSS | <15 V | |
Technology of field-effect transistor | Technology | JFET | |
FET channel type | Channel | N-ch | |