2ПС202Б2
2ПС202, 2ПС202А2, 2ПС202Б2, 2ПС202В2, 2ПС202Г2
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Description
Parameters
| Parameter | 2ПС202А2 | 2ПС202Б2 | 2ПС202В2 | 2ПС202Г2 | |
|---|---|---|---|---|---|
Noise factor | NF | ||||
Power dissipation | P | <60 mW | |||
Slope of a field effect transistor | S1-S2/I | >0.65при Uси = 10 В | >0.65при Uси = 10 В | >1при Uси = 10 В | >1при Uси = 10 В |
Initial drain current of the field effect transistor | I01-I02 | 350 mA ~ 800 mAпри U = 10 В | 350 mA ~ 1.5 Aпри U = 10 В | 1.1 A ~ 3 Aпри U = 10 В | 1.1 A ~ 3 Aпри U = 10 В |
Gate leakage current with connected drain and source | IG | 300 pAпри Uсз = 10В | |||
Input capacitance of field effect transistor | Ciss | 6 pF | |||
Feedthrough capacitance | C12 | 2 pF | |||
Continuous voltage between gate and drain | UGD | <20 V | |||
Continuous voltage between gate and source | UGS | <500 mV | |||
Continuous voltage between drain and source | UDSS | <15 V | |||
Technology of field-effect transistor | Technology | JFET | |||
FET channel type | Channel | N-ch | |||