КПС105

КПС105, КПС105А, КПС105Б, КПС105В, КПС105Г

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Description

Parameters

Parameter		КПС105А	КПС105Б	КПС105В	КПС105Г
Noise factor	N_F
Slope of a field effect transistor	S1-S2/I	>0.5при Uси = 10 В
Gate leakage current with connected drain and source	I_G	100 pA	1 nA	1 nA	1 nA
Input capacitance of field effect transistor	C_iss	6 pF
Feedthrough capacitance	C₁₂	2 pF
Continuous voltage between gate and drain	U_GD	<25 V
Continuous voltage between gate and source	U_GS	<25 V
Continuous voltage between drain and source	U_DSS	<25 V
Technology of field-effect transistor	Technology	JFET
FET channel type	Channel	N-ch