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КП102Е

КП102, КП102Е, КП102Ж, КП102И, КП102К, КП102Л

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Description

Parameters

Parameter		КП102Е	КП102Ж	КП102И	КП102К	КП102Л
Noise factor	N_F
Slope of a field effect transistor	S1-S2/I	0.25 ~ 0.7при Uси = 10 В	>0.3при Uси = 10 В	0.35 ~ 1при Uси = 10 В	0.45 ~ 1.2при Uси = 10 В	0.55 ~ 1.3при Uси = 10 В
Initial drain current of the field effect transistor	I₀₁-I₀₂	200 mA ~ 550 mAпри U = 10 В	400 mA ~ 1 Aпри U = 10 В	700 mA ~ 1.8 Aпри U = 10 В	1.3 A ~ 3 Aпри U = 10 В	2.4 A ~ 6 Aпри U = 10 В
Gate leakage current with connected drain and source	I_G	15 nAпри Uсз = 10В
Input capacitance of field effect transistor	C_iss	10 pF
Feedthrough capacitance	C₁₂	5 pF
Continuous voltage between gate and drain	U_GD	<15 V
Continuous voltage between gate and source	U_GS	<10 V
Continuous voltage between drain and source	U_DSS	<15 V
Technology of field-effect transistor	Technology	JFET
FET channel type	Channel	P-ch