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2П101Б

КП101, 2П101А, 2П101Б, 2П101В, КП101Г, КП101Д, КП101Е

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Description

Parameters

Parameter2П101А2П101Б2П101ВКП101ГКП101ДКП101Е
Noise factor
NF
5 dBпри f = 1кГц5 dBпри f = 1кГц10 dBпри f = 1кГц4 dBпри f = 1кГц7 dBпри f = 1кГц5 dBпри f = 1кГц
Power dissipation
P
<50 mW
Slope of a field effect transistor
S1-S2/I
>0.3при Iс = 5 мА >0.3при Iс = 5 мА >0.5при Iс = 5 мА >0.15при Iс = 5 мА >0.3при Iс = 5 мА >0.3при Iс = 5 мА
Initial drain current of the field effect transistor
I01-I02
300 mA ~ 1 Aпри U = 5 В700 mA ~ 2.2 Aпри U = 5 В500 mA ~ 5 Aпри U = 5 В150 mA ~ 2 Aпри U = 5 В300 mA ~ 4 Aпри U = 5 В500 mA ~ 5 Aпри U = 5 В
Gate leakage current with connected drain and source
IG
10 nAпри Uсз = 5В10 nAпри Uсз = 5В10 nAпри Uсз = 5В2 nAпри Uсз = 5В2 nAпри Uсз = 5В2 nAпри Uсз = 5В
Input capacitance of field effect transistor
Ciss
15 pF15 pF15 pF12 pF12 pF12 pF
Continuous voltage between gate and drain
UGD
<10 V
Continuous voltage between gate and source
UGS
<10 V
Continuous voltage between drain and source
UDSS
<10 V
Technology of field-effect transistor
Technology
JFET
FET channel type
Channel
P-ch