2Т117А

КТ117, КТ117А, КТ117Б, КТ117В, КТ117Г, 2Т117А, 2Т117Б, 2Т117В, 2Т117Г

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Description

Parameters

Parameter		КТ117А	КТ117Б	КТ117В	КТ117Г	2Т117А	2Т117Б	2Т117В	2Т117Г
Static current transfer coefficient of bipolar transistor	hFE	0.5 ~ 0.7	0.65 ~ 0.9	0.5 ~ 0.7	0.65 ~ 0.9	0.5 ~ 0.7	0.65 ~ 0.85	0.5 ~ 0.7	0.65 ~ 0.85
Frequency	f	<200 kHz
Single junction transistor structure	Structure	n-base
Turn on time	T_ON	=3 µs; <5 µs
Emitter turn-on current	I_E-ON	<20 µA
Emitter turn-off current	I_E-OFF	>1 mA
Modulation current	I_MOD	>10 mA
Reverse emitter current	I_E-R	=1 µA; <10 µA
Resistance between bases	R_B1-B2	4 kΩ ~ 9 kΩ	4 kΩ ~ 9 kΩ	8 kΩ ~ 12 kΩ	8 kΩ ~ 12 kΩ	4 kΩ ~ 7.5 kΩ	4 kΩ ~ 7.5 kΩ	6 kΩ ~ 9 kΩ	6 kΩ ~ 9 kΩ
Power dissipation	P	<300 mW
Voltage between bases	U_B1-B2	<30 V