Доход от майнинга

КТ117

КТ117, КТ117А, КТ117Б, КТ117В, КТ117Г, 2Т117А, 2Т117Б, 2Т117В, 2Т117Г

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterКТ117АКТ117БКТ117ВКТ117Г2Т117А2Т117Б2Т117В2Т117Г
Static current transfer coefficient of bipolar transistor
hFE
0.5 ~ 0.70.65 ~ 0.90.5 ~ 0.70.65 ~ 0.90.5 ~ 0.70.65 ~ 0.850.5 ~ 0.70.65 ~ 0.85
Frequency
f
<200 kHz
Single junction transistor structure
Structure
n-base
Turn on time
TON
=3 µs; <5 µs
Emitter turn-on current
IE-ON
<20 µA
Emitter turn-off current
IE-OFF
>1 mA
Modulation current
IMOD
>10 mA
Reverse emitter current
IE-R
=1 µA; <10 µA
Resistance between bases
RB1-B2
4 kΩ ~ 9 kΩ4 kΩ ~ 9 kΩ8 kΩ ~ 12 kΩ8 kΩ ~ 12 kΩ4 kΩ ~ 7.5 kΩ4 kΩ ~ 7.5 kΩ6 kΩ ~ 9 kΩ6 kΩ ~ 9 kΩ
Power dissipation
P
<300 mW
Voltage between bases
UB1-B2
<30 V