КТ997Б

КТ997, КТ997А, КТ997Б

High-power high-frequency silicon transistor for use in VLSI memory control devices on cylindrical magnetic domains

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Description

Parameters

ParameterКТ997АКТ997Б
Collector surge current
IC-i
<20 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<45 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<45 V
Static current transfer coefficient of bipolar transistor
hFE
>40>20
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<10 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<51 MHz
Noise factor
NF
<1 dB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<50 W