КТ969А

КТ969, КТ969А

High-frequency silicon transistor of high power for use in the output stages of video amplifiers of television receivers, analogue of BF469

This page is planned to add content in the near future.

Please, hit "Vote" button if you interested in it, so we can know which pages must be filled out first of all. Up to 10 votes per day are accepted from one IP address

Description

Parameters

ParameterКТ969А
Collector surge current
IC-i
<200 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<300 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<250 V
Constant power dissipated on the transistor collector
PC
<1 W
Static current transfer coefficient of bipolar transistor
hFE
50 ~ 250
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<50 nA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<60 MHz
Noise factor
NF
<1 dB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<6 W