КТ961Б

КТ961, КТ961А, КТ961Б, КТ961В

High-power high-frequency silicon transistor for use in amplifiers and switching devices

Documents

Description

Parameters

ParameterКТ961АКТ961БКТ961В
Collector surge current
IC-i
<2 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<100 V<80 V<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<80 V<60 V<45 V
Constant power dissipated on the transistor collector
PC
<1 W
Static current transfer coefficient of bipolar transistor
hFE
40 ~ 10063 ~ 160100 ~ 250
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<10 µA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<50 MHz
Noise factor
NF
<500 mdB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<12.5 W