Parameter		КТ940А	КТ940Б	КТ940В
Collector surge current	I_C-i	<300 mA
Collector-base voltage at a given reverse collector current and open emitter circuit	U_CBO	<300 V	<250 V	<160 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current	U_CEO	<300 V	<250 V	<160 V
Constant power dissipated on the transistor collector	P_C	<1.2 W
Static current transfer coefficient of bipolar transistor	hFE	>25
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера	I_CB-R	<50 nA
Limit frequency of current transfer coefficient of a bipolar transistor	f_h21	<90 MHz
Noise factor	N_F	<1 dB
Bipolar transistor structure	Structure	NPN
Transistor collector power with heatsink	P_C-HS	<10 W

Nothing found