КТ9115

КТ9115, КТ9115А

High-power high-frequency silicon transistor for use in phase-inverse pre-terminus cascades of high-quality audio frequency amplifiers and video amplifiers for television receivers

Documents

Description

Parameters

ParameterКТ9115А
Collector surge current
IC-i
<300 mA
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<300 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<300 V
Constant power dissipated on the transistor collector
PC
<1.2 W
Static current transfer coefficient of bipolar transistor
hFE
25 ~ 250
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<50 nA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<90 MHz
Noise factor
NF
<1 dB
Bipolar transistor structure
Structure
PNP
Transistor collector power with heatsink
PC-HS
<10 W