КТ908А

КТ908, КТ908А, КТ908Б

High-frequency silicon transistor of high power for operation in switching voltage stabilizers and converters, pulse modulators

Documents

Description

Parameters

ParameterКТ908АКТ908Б
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<100 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V
Static current transfer coefficient of bipolar transistor
hFE
8 ~ 60>20
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<25 mA<50 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<30 MHz
Noise factor
NF
<2.3 dB
Bipolar transistor structure
Structure
NPN
Transistor collector power with heatsink
PC-HS
<50 W