КТ903

КТ903, КТ903А, КТ903Б

High Power High Frequency Silicon Transistor for High Frequency Generator and Amplifier Circuits

Documents

Description

Parameters

ParameterКТ903АКТ903Б
Collector surge current
IC-i
<5 A
Collector-base voltage at a given reverse collector current and open emitter circuit
UCBO
<60 V
Voltage between the collector and the emitter of the transistor with an open base circuit and a given emitter current
UCEO
<60 V
Static current transfer coefficient of bipolar transistor
hFE
15 ~ 7040 ~ 180
Обратный ток коллектора. Ток через коллекторный переход при заданном обратном напряжении коллектор-база и разомкнутом выводе эмиттера
ICB-R
<10 mA
Limit frequency of current transfer coefficient of a bipolar transistor
fh21
<120 MHz
Noise factor
NF
<2.5 dB
Bipolar transistor structure
Structure
NPN
Collector-base pulse voltage
UCBO-i
<80 V
Transistor collector power with heatsink
PC-HS
<30 W
Collector-emitter pulse voltage with base disconnected
UCEO-i
<80 V